| 摘要 |
PURPOSE:To obtain a stabilized basic mode oscillation by a method wherein a groove is formed on one surface of a substrate and a multilayer hetero structure is provided on the substrate, having a P-N junction along the other surface, on all the sections excluding the groove. CONSTITUTION:A Zn diffusion is performed on an N type InP 10, a narrow-strip of groove 15 is formed by perfoming an etching, a P type Inp 11, an N type InP2, InGaAsP light emitting layer 3, a P type InP4 and a P type InGaAsP 5 are laminated using a liquid-phase epitaxial method, an electrode 7 is mounted by providing an aperture on a film 6 and an electrode 8 is installed on the substrate 1. At this time, when the depth of the groove 15 and the thickness of the N type InP layer 2 are suitably changed, the light emitting layer 3 located on the groove 15 changes its form, the lateral refractive index distribution is increased at the central part and the lateral light confinement effect is generated. As a result, a stabilized lateral mode oscillation can be obtained. On the other hand, no current flows on the area excluding the groove by the aid of the P-N junction 12 and the operating current can be reduced. |
