| 摘要 |
PURPOSE:To obtain a lateral transistor having low collector saturated resistor and small element area by forming a lattice collector region surrounding an emitter region and leading an electrode via multilayer wire. CONSTITUTION:An n type epitaxial layer 11 is formed on a p type Si substrate 10. Then, a p<+> type emitter region 2 and a p<+> type collector region 3 arranged in lattice state around the emitter region 2 are formed. An insulating film 4 is formed, and lattice-shaped collector aluminum electrode 5, a base aluminum electrode 8 connected to the base region 11 and an emiter electrode 16 are formed along the surface of the lattice-shaped collector region 3. Interlayer insulating film 6 is laminated, an emitter electrode is exposed, branched emitter aluminum electrode is formed, and the respective emitter regions are connected. The electrode 5 is so formed as to surround the emitter in lattice shape, and the collector saturated resistance can be reduced. |
