发明名称 |
APPARATUS FOR PRODUCING CRYSTALLINE SILICON |
摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for producing crystalline silicon, by which contamination of impurities into a silicon raw material before melting and silicon molten liquid after melting can be suppressed and high quality polycrystalline silicon having low impurity content and high crystallinity can be easily produced at a low cost. SOLUTION: In the apparatus for producing crystalline silicon by imparting temp. gradient to silicon molten liquid 3 obtained by melting a silicon raw material 3a introduced into a crucible 4 provided in a chamber 2 in such a manner that positive temp. gradient is formed from the inner bottom 4a of the crucible 4 toward the upper direction and crystallizing the silicon molten liquid 3 from the inner bottom of the crucible 4 toward the upper direction, a susceptor 9 provided above the crucible 4, a supporting member 10 for supporting the susceptor 9 and a lifting device 11 for lifting and lowering the susceptor 9 through the supporting member 10 are provided.
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申请公布号 |
JP2000319094(A) |
申请公布日期 |
2000.11.21 |
申请号 |
JP19990125340 |
申请日期 |
1999.04.30 |
申请人 |
MITSUBISHI MATERIALS CORP |
发明人 |
YANOO AKIHITO;HIGUCHI AKIRA |
分类号 |
H01L21/208;C30B29/06;(IPC1-7):C30B29/06 |
主分类号 |
H01L21/208 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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