发明名称 SEMICONDUCTOR RADIANT RAY DETECTOR
摘要 PURPOSE:To obtain high sensitivity despite a nonbias pattern by providing a metal electrode so that a void layer which becomes a sensitive part against a radiant ray may be formed on the both surfaces opposed to each other of a semiconductor substrate. CONSTITUTION:A gold electrode 121 is provided as the first metal electrode on the entire one surface of an N type silicon substrate 11. On the other surface, a gold electrode 122 is provided as the second metal electrode together with an aluminum electrode 13 as the third metal electrode. Space between the gold electrode 122 and the aluminum electrode 13 is electrically insulated. A shared terminal A1 is led from the gold electrodes 121, 122 and another terminal A2 is led from the aluminum electrode 13. Under this constitution, it is possible to form a void layer held by the gold electrodes 121, 122 on the both sides of a silicon substrate 11, despite a nonbias pattern. As a result, the polarized part against radiant ray is increased.
申请公布号 JPS56110271(A) 申请公布日期 1981.09.01
申请号 JP19800013306 申请日期 1980.02.06
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 NARUSE YUUJIROU;SUGITA TOORU;KOBAYASHI TETSUJI
分类号 G01T1/24;H01L31/09;H01L31/118 主分类号 G01T1/24
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