| 摘要 |
PURPOSE:To obtain a region of a desired area without pollution by providing a resist layer on a gate electrode, applying heat treatment thereto and covering the laternal surface of the electrode with the suspended resist layer on the occasion that source and drain regions are formed on a semiconductor substrate by injection of ions by using the electrode as a mask. CONSTITUTION:On the periphery of the P type Si substrate 1 is provided a thick field oxidized film 2, to an active region surrounded by the film 2 is connected a thin gate oxidized film 3, and in the central part of the film 3 is formed a polycrystalline Si gate electrode 4. Next, the electrode 4 is covered with the resist layer 5, and by using this as a mask and injecting P ions with low density of impurities, a shallow depression region is formed in the source and drain regions. After that, heat treatment is applied under a prescribed condition, the layer 5 is melted and turned into a layer 5' covering the lateral side of electrode 4 as well. Then, as ions with high density of impurities are injected into a depression region other than the depression region covered with suspension of the layer 5' and thus the source and drain resions of desired dimensions are obtained. |
