| 摘要 |
PURPOSE:To obtain the photoelectric conversion device in a low price and productivity without using a P-N junction by a method wherein the photoelectric conversion device is made two kinds of MIS type structures and a compensatary stracture in such that one electrode is made positive and the other electrode negative. CONSTITUTION:The first conductive transparent electrode 2 of 1,000-5,000Angstrom thick is cover-attached on an insulation substrate 1 made of transparent glass by a spray method or a vapor growth method while vapors gasified by adding He to SbCl5, SnCl4, H2O being heated at 300-500 deg.C. Then, an end on one side is used as an external electrode take-out means and an end on the other side is removed for the second electrode take-out means 8. After that, a silicon nitride film 3 of 2-40Angstrom thick is grown on the whole surface in a plasma atmosphere of 0.001-1Torr and an Si layer 4 is heaped on the film 3. Then, the whole surface is covered again with a silicon nitride film 5 in the same thickness, the second A electrode 6 of 0.5-1mum is cover-attached on the film 5 and covered with a resin 7 of epoxy or the like, and the reverse side of the substrate 1 is applied an irradiation of light 10 to obtain a conversion efficiency reached 13-18%. |
