| 摘要 |
PURPOSE:To obtain an electrode structure having high heat resistance, preferable adherence and excellent strength by forming an Ag-plated electrode through Ti and Pd films on the main surface of an Si substrate. CONSTITUTION:A p type layer 4 is formed on an n type epitaxial layer of an n<+> type Si substrate, a window is opened at an SiO2 film 5, and Ti 5 having preferable adherence with the Si and the SiO2 and high heat resistance is evaporated thereon. Subsequently, a heat resistant Pd 6 for preventing the oxidation of the Ti is evaporated thereon. Then, a PSG 7 is covered thereon, is etched to open a window thereat, and the PSG surface is thus roughed. An Au-Ag electrode 9 is formed on the back surface of the substrate, and an Ag bump electrode 10 is formed by an electric plating on the front surface of the substrate, thereby increasing the adhering strength. When this diode element is inserted between studs 12 in a glass tube 11 and the tube is sealed at a temperature higher than 600 deg.C, there can be obtained the DHD-sealed semiconductor device having a highly reliable electrode structure. |
