| 摘要 |
PURPOSE:To increase the mechanical intensity and to prevent the deterioration of withstand voltage at P-N junctions of the mesa type semiconductor device by a method wherein Si layers and protective films are formed in order at the circumferential parts neighboring to mesa grooves exposing the end edges of the P-N junctions on the wall faces. CONSTITUTION:After the Si layers 11, 12 (polycrystalline Si is suitalbe) are formed at the circumferential parts neightboring to the mesa grooves 2, 3 exposing the end edges of the P-N junctions J1, J2 on the wall faces, the glass passivation films 9, 10 are formed. By this way, because the effect of stress being caused by the difference of thermal expansion coefficient between the SiO2 films, 7, 8 and the passivation films 9, 10 acting on the end edge parts of the P-N junctions J1, J2 can be moderated, so that the deterioration of withstand voltage of the P-N junctions can be prevented and the increase of leakage current can be suppressed. |
