发明名称 SEMICONDUCTOR MEMORY
摘要 PURPOSE:To eliminate an erroneous action by the static electricity of an eraseable, programmable ROM, by covering a prearranged area with an aluminium film and keeping it grounded, when a memroy cell circuit including a floating gate and a peripheral circuit including X, Y decoders on a semiconductor, are formed. CONSTITUTION:On one surface of the same semiconductor substrate, a memory cell circuit 6 including a floating gate and a peripheral circuit including X, Y decoders Dx, Dy which adjoin the circuit 6, are formed. Under this constitution, a cell circuit 6 is composed of a floating gate 1, a wiring 3, a contact part 4 connected to the former, etc. In this configuration, approximately half the contact part 4 are covered by an aluminium charge protective film 5 through an insulative film and then are grounded. Likewise, an aluminium film 5 is attached on decoders Dx and Dy and is kept grounded.
申请公布号 JPS5674965(A) 申请公布日期 1981.06.20
申请号 JP19790150661 申请日期 1979.11.22
申请人 HITACHI LTD 发明人 MOCHIZUKI MASAYOSHI
分类号 H01L31/02;H01L21/8247;H01L27/105;H01L29/788;H01L29/792 主分类号 H01L31/02
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