| 摘要 |
PURPOSE:To obtain a fine pattern through a process consisting of forming a desired pattern by making a desired pattern exposure to light of a desired pattern by a resist film obtained through the heat treatment of a coat made of a class-3 butyl methacrylate polymer, developing the exposure using a developer containing a keton series material and so forth and rinsing thus-obtained work using a cell-solve series organic solvent. CONSTITUTION:A class-3 butyl methacrylate polymer or copolymer of radioactiveray sensing positive type resist materials and a methyl methacrylate copolymer are mixed at a molar ratio of 3:7. Next, thus-obtained work is applied to an Si wafer and prebacked at about 250 deg.C for 1hr to form a resist film. Thereafter, electronic ray exposure is made using an electronic-ray drawing system, development using a developer containing a solvent selected out of keton, amide, cell-solve and ester series materials, and rinsing using a rinsing liquid containing a cell-solve series organic solvent. Thus, a high-sensitivity positive type resist is obrained for forming a fine pattern. |
