| 摘要 |
PURPOSE:To obtain a multilayer wiring structure capable of performing a high- speed movement of an element for the subject device by a method wherein the surface of the first layer electrode wiring, consisting of a cilicide of a high-melting- point metal, is turned to an insulating layer by performing an oxidation treatment and the second layer electrode wiring is formed in such way that a portion of which is superposed over the first layer electrode wiring. CONSTITUTION:A silicon oxidation film 2 is formed by oxidizing the surface of a P type Si substrate 1, an MoSi2 film 3 is coated on the above film 2 using the sputtering method and, in addition, a silicon oxidation film is deposited on the above film 3 using a CVD method. Then a selective etching is performed using a resist mask and the first layer gate electrode 3 is formed. Next, a silicon oxidation film 6 is formed on the surface of the substrate by performing an oxidation process and, at the same time, a silicon oxidation film 62 is formed on the side of the first layer gate electrode. Then an MoSi2 layer 7 is coated, a patterning is performed and the second gate electrode is provided. Hence, the electric resistance of the wiring layer is reduced and the high-speed performance of the element can be obtained. |
