| 摘要 |
PURPOSE:To obtain the switching element capable of compensating the low breakdown voltage and having a breakdown voltage equal to that of SCR of a substrate by incorporating a diffused resistor into a semiconductor substrate in one body and selecting the diffused position. CONSTITUTION:Side wall of an element is provided with an N type substrate 1 equipped with separate diffusion 2 of P type impurity. A P type anode layer 3 is attached onto the reverse side and an annular P type gate layer 4 is formed on the surface, and a P type diffused resistor 5 is formed in a region 1a caught between the gate layers. As the resistor layer 5 is surrounded by a depletion layer stretching around the gate layer 4 at the time of its operation, it is possible to obtain a sufficiently high breakdown voltage almost equal to that of SCR or the substrate. And then, an N type cathode layer 6 and an N type protective ring 7 are provided, a window 11 for the gate is provided on an insulation film 8, and a window 8 for the resistor is provided on the gate layer in a position capable of obtaining the required resistance value from the terminal connected in the substrate, and then, the windows 10 and 8 are connected with each other by an Al electrode 9. It is possible, by using this constitution, to obtain the switching element of high capability. |
