| 摘要 |
PURPOSE:To obtain a bonding wire for a semiconductor device with the increased mechanical strength and the bonding strength of an Si chip to a pad by a constitution wherein the bonding wire contains Au and Pd with the predetermined purity and composition and a very small amount of at least one of Be, Ca and Ge with a predetermined amount. CONSTITUTION:A bonding wire for a semiconductor device is formed by adding 1-40W/O of high purity Pd with the purity not less than 99.9W/O to high purity Au with the purity not less than 99.99W/O. Then, at least one of Be, Ca and Ge is added to thus obtained Au and Pd by 0.0003-0.05W/O in total amount, as required. By so doing, it becomes possible to increase the mechanical strength, particularly the fructure strength at the bonding time, and also the bonding strength in the state after an Si chip is bonded to a pad. Thus, a very fine wire with a diameter of several tens mum can be obtained with ease and the size of the pad can be reduced. |
