| 摘要 |
PURPOSE:To obtain a package for a high-frequency semiconductor device by connecting the metallized layer on the upper surface of an insulating frame to a metal base by using the metallized layer or bus bar on its side, and providing metallized layers both on the projecting surface and the periphery of a hermetic sealing cap having a convex cross-section. CONSTITUTION:A metallized layer or bus bar 2c connected to a portion of a metal base 1 is provided on a portion of the periphery of a frame 2 of alumina ceramic, and connected to an annular metallized layer 2a on its upper surface. In the center of a sealing cap 9 of the same insulative metarial, a convex projection is formed corresponding to a semiconductor element 3, and a metallized layer 11a is provided on the projecting surface. Moreover, an annular metallized layer 11b is provided on the surface corresponding to the metallized layer 2a of the frame 2, and connected to the layer 2. The constitution prevents oscillation and the like, and permits the reduction of the feedback capacity and the like, so that a package most suitable for a compact and high-power ultrahigh-frequency semiconductor device is obtained. |
