| 摘要 |
PURPOSE:To eliminate the apprehension of the disconnection of wires in the semiconductor device and to stably manufacture the device by providinga path where a thin monocrystalline silicon film is not exposed at the time of etching polycrystalline silicon. CONSTITUTION:A P type monocrystalline silicon thin film 12, a silicon oxide film 13 and a silicon nitride film 14 are sequentially formed on a sapphire monocrystalline substrate 11. Then, the silicon nitride film 14 is patterned and etched, the monocrystalline silicon thin film 12 is altered to an oxide film 15, and is divided into a plurality of P type regions 16. An N<+>type region 18 is partly formed on the monocrystalline silicon thin film 12, and a silicon oxide film 19 is further formed thereon. Then, a direct contact hole 20 is perforated thereat. A drain 24 is then connected through a direct contact to a wire 25 via the thin polycrystalline silicon film. |
