MANUFACTURE OF AMORPHOUS SILICON FILM

摘要

PURPOSE:To manufacture an amorphous silicon film (a-Si film) having high bonding strength to a substrate by heat evaporating Si or an Si alloy in a vacuum followed by ionization and vapor deposition on the substrate. CONSTITUTION:For example, an i-type a-Si film not doped with substitution type impurities is manufactured by the following method: vacuum container 1 is evacuated to about 10<-7>Torr through exhaust port 8, and substrate 3 set on substrate attaching stand 2 is heated 5 to about 250 deg.C. H2 gas is then fed 9 into container 1 to adjust the internal pressure of container 1 to 10<-1>-10<-6>Torr. Si evaporation source 4 made of Si or Si alloy is heat-evaporated by resistance heating or other method, and the vapor is ionized with auxiliary electrode 6 having DC and/ or AC power source together with H2 and deposited on substrate 2. The resulting deposited film is an Si-H alloy amorphous film, and it has a low localization level and is capable of controlling valence electron.