| 摘要 |
PURPOSE:To obtain high quality multiple element semiconductor crystals by employing boats having more number of liquid reservoirs than required number of growing layers and prevent variation of composition in the composition of dummy due to extraction of liquid phase at the time of melt-back. CONSTITUTION:The same liquid 10 as the buffer layer growing liquid 6 is stored in an excessive reservoirs 9, and arranged in front of the reservoir 1. The liquid 10 is brought into contact with the substrate 4, and the solution 6 is brought into contact with the dummy 5 to conduct melt- back. In this case the reservoir 2 for growing an active layer is isolated from the dummy 5 so that the dummy 5 is not dissolved in the liquid 7. Then, the boats are moved to bring the liquid 6 into contact with the substrate 4, the furnace temperature is lowered to form new surface on the substrate 4 with buffer layer. Though the liquid 7 is brought into contact with the dummy 7, the furnate temperature is lowered so that the dummy is not melt back to the solution 7 to occur no change in composition. Subsequently, the boats are moved as the conventional manner, active layer and top layer are sequentially laminated thereon. According to this configuration, the active layer is obtained in the same composition as the liquid in accuracy immediate after forming the layers, and a laser light corresponding in wavelength accurately to the theoretical composition can be produced. |
