| 摘要 |
PURPOSE:To provide a semiconductor integrated circuit device having a high cooling effect and a high packaging density, wherein an IC substrate is covered by a protecting film highly resistant to moisture and heat and having electrodes formed on exposed end portion of the substrate, the substrate thus covered being fitted in a socket of a vessel filled with a refrigerant. CONSTITUTION:A plurality of IC memory elements A are formed in the semiconductor substrate 1. An Si3N4 film or a polyamide resin film constituting a moisture proof protecting film 2 is formed on the surface of the element A and on the reverse side of the substrate 1. The portion of the film 2 on the element A near the end of the substrate 1 is removed to expose a region 4 on which formed are a plurality of electrode terminals 5 adapted to fit in a socket 12 provided in the vessel 9. The IC thus constructed is placed in a vessel 9 having a heat exchanger 14, such that the terminals 5 fit in the socket 12 provided on the ceiling 11 of the vessel 9. The vessel 9 is then filled with a refrigerant 13 such as carbon tetrafluoride. |
