| 摘要 |
PURPOSE:To obtain the titled sensor having a desired ion sensitive film by a method wherein an alcohol solution of an organic metal compound is coated on a FET gate insulation film which is coated with a surface stabilizing film, and is subjected to hydrolysis and then heated. CONSTITUTION:Source diffusion region 32 and drain diffusion region 33 are formed on p-type silicon substrate 31, and also, gate oxide film (SiO2 film) 34 is formed. Further, on top of this is formed surface stabilizing film 36 consisting of Si3N4, and thereby the gate region part of the FET is formed. Next, an alcohol solution of an organic metal compound [Si(OC2H5)4, Ca(OCH3)2, NaOCH3, etc.] is coated so as to cover the above-mentioned gate region part. This is dried, and a coating film of thickness about 500-10000Angstrom is produced. This coating film is subjected to hydrolysis thoroughly in the presence of moisture. After this, the film is heat treated in an inert gas (N2, for example) atmosphere at about 500-800 deg.C for 2-3hr, and sensitive film 41 is formed, which becomes a sensor. |
