发明名称 Integrated circuit capacitors
摘要 A semiconductor integrated circuit includes storage capacitors (C1,C2) which, in order to minimise the incidence of soft errors caused by alpha particle bombardment, do not form depletion layers with the substrate (4). Each capacitor comprises two electrode layers (2, 2'; 3) separated by a dielectric layer (1). The lower electrode (3) is deposited on an insulating surface layer (13) on the substrate (4) and is connected either to the substrate or to a source of potential. <IMAGE>
申请公布号 GB2045526(A) 申请公布日期 1980.10.29
申请号 GB19800010299 申请日期 1980.03.27
申请人 ITT INDUSTRIES INC 发明人
分类号 H01L27/10;G11C11/404;G11C19/18;H01L21/8234;H01L21/8242;H01L23/556;H01L27/06;H01L27/08;H01L27/088;H01L27/108;H01L29/78;(IPC1-7):01L27/04;11C11/21 主分类号 H01L27/10
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