发明名称 CHEMICAL VAPOR DEPOSITION
摘要 <p>A process for chemical vapor deposition of ruthenium on heat resistant substrates employing ruthenium 1, 3 dione compounds as volatile sources and causing the volatile material to impact on a heated receiving substrate in random fashion in a quiescent, low-pressure atmosphere.</p>
申请公布号 CA1087040(A) 申请公布日期 1980.10.07
申请号 CA19760252239 申请日期 1976.05.11
申请人 INCO LIMITED 发明人 CROSBY, JEFFREY N.;HANLEY, ROBERT S.
分类号 C22B11/02;B23P15/28;C23C16/18;C25C7/02;H01H1/02;(IPC1-7):23C11/02 主分类号 C22B11/02
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