| 摘要 |
PURPOSE:To obtain a high reliability of series connection by isolating a junction with a continuous intrinsic semiconductor thin film layer or a high specific resistance semiconductor thin film layer forming and connecting in series a plural thin film solar battery on a single substrate with pn-junctions given in reverse structure each other. CONSTITUTION:A transparent conductive film 22 consisting of In2O3-SnO2 is fixed at given intervals on a borosilicate glass 21 working as a light receiving side of a solar battery panel at the same time, and an n<+>-type amorphous Si thin film layer n<+> is piled up onto an exposed portion of the film 22 by means of a mask 23 having a given pattern through low-pressure glow discharge for which a mixed gas of SiH4, PH3, H2 is used. Next, the mask 23 is moved, a p<+>-type thin film layer p<+> is piled up onto the film 22 exposed adjacently to the layer n<+> by means of B2H6 instead of PH3, and an undoped high specific resistance i-type thin film layer i0 is grown on the overall surface. After that, p<+>- and n<+>-type layers are piled up thereon according to the layers n<+> and p<+> so as to have pn-junctions in reverse structure, and these are connected with a back electrode 24 of Ag, Al, etc. |
