METHOD OF GROWING GALLIUM ARSENIDE CRYSTALS

摘要

A method of growing gallium arsenide crystals obtained by reaction of a first gaseous phase containing hydrogen and arsenic trichloride and a liquid gallium phase, in which the reaction forms a second gaseous phase from which gallium arsenide is deposited in such circumstances that the molar fraction of arsenic trichloride is larger than 2x10-2 and is preferably between 2x10-2 and 10-1.