SEMICONDUCTOR MEMORY CELL

摘要

PURPOSE:To obtain a small-occupied area cell where a complicated sensor circuit is needless and operation can be performed in a low speed, by using two sets of transistors such as NPN transistors which form an FF-type memory cell and making current rise of them unbalanced. CONSTITUTION:A FF-type memory cell is formed by NPN transistors T1 and T2 which have emitters connected commonly and have collectors and bases connected to mutually. When line selection lines 1 and 5 are made high-level, transistor T6 which has the emitter connected commonly to transistors T1 and T2 is turned on and off according to turning-on and off of transistor T2, and storage contents dependent upon transistors T1 and T2 are read out by a low-speed operation without providing a sensor circuit through the collector on digit line D and having influence on the electrostatic capacity due to the high-level of lines 1 and 5.