| 发明名称 |
Electrolytic etch preparation of semiconductor surfaces |
| 摘要 |
The surface of a semiconductor is prepared by electrolytically removing the surface of the semiconductor. A two component electrolyte is used. A first component forms an oxide on the surface of the semiconductor and the second component dissolves the oxide.
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| 申请公布号 |
US4194954(A) |
申请公布日期 |
1980.03.25 |
| 申请号 |
US19780884388 |
申请日期 |
1978.03.08 |
| 申请人 |
POST OFFICE THE |
发明人 |
FAKTOR, MARC M;STEVENSON, JOHN L |
| 分类号 |
C25F3/12;H01L21/3063;H01L21/316;(IPC1-7):C25F3/12 |
主分类号 |
C25F3/12 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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