| 摘要 |
A semiconductor device comprising a semiconductor body portion (1) encircled by a supporting wall (3) of electrically insulating material, e.g. glass, which also provides support for an electrical connecting lead (11 or 13) secured thereto, to a region of the body portion. The s.c. body portion typically includes a Schottky barrier diode wherein the electrical conductor 13 has a reduced area portion contacting a gallium-arsenide epitaxial layer 9 to reduce diode capacitance. A method is described for the simultaneous fabrication of a number of diodes in a single wafer of low resistivity gallium- arsenide. Areas of the water, each containing a diode, are then separated from each other. <IMAGE> |
