发明名称 RESIST PATTERN FORMING METHOD
摘要 PURPOSE:To form a positive type resist with high contrast and high sensitivity. CONSTITUTION:A substrate to be processed is coated with a pattern forming material consisting of a compd. having an isopropenyloxycarbonyl group and a functional group capable of reacting with the isopropenyloxycarbonyl group and a compd. which generates an acid when irradiated with light or ionized radiation and the coated substrate is dried and heated to a temp. at which the groups can react with each other to form a crosslinked resist film. This resist film is patternwise irradiated with light or ionized radiation and developed with an alkaline aq. soln.
申请公布号 JPH06250392(A) 申请公布日期 1994.09.09
申请号 JP19930037161 申请日期 1993.02.26
申请人 AIBAITSU KK 发明人 KUZUHA NOBORU
分类号 G03F7/004;G03F7/039;G03F7/38;H01L21/027;H01L21/30;(IPC1-7):G03F7/039 主分类号 G03F7/004
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