| 摘要 |
In the manufacture of a monolithic light-emitting diode array, electrical isolation between the n-type regions of portions of the array, for example the columns of a matrix array, is effected by mechanically cutting channels between the portions, through the n-type region and the common electrode. This method of forming the isolation channels makes it possible to produce much narrower channels than can be achieved by chemical etching, thus providing a high resolution array.
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