| 摘要 |
PURPOSE:To establish the semiconductor device in which the inversion of the part along the semiconductor element boundary is avoided and the reduction in the effective semiconductor element width is less. CONSTITUTION:On the transmissive substrate 3, the P type single crystal Si layer 4, buffer SiO2 layer 5, SiN layer 6, and buffer SiO2 layer 7 are formed in lamination, and the resist is coated and the mask 8 is formed on the SiO2 layer 7 (Fig. a). Further, the SiO2 layer 7, SiN layer 6 and SiO2 layer 5 are respectively etched and a part of the Si layer 4 is exposed (Fig. b). After etching the Si layer 4, the exposed Si layer 4 is thermally oxided to grow the field oxide insulation layer 9 (Fig. c). Further, the SiN layer 6 is removed (Fig. d) and the positive type resist 10 is coated on the surface of the Si layer 4 and the insulation layer 9 (Fig. e). The resist 10 is exposed from the lower side of the substrate 3. In this case, only the resist 10 on the insulation layer 9 is exposed. Further, the exposed resist 10 is removed (Fig. f) and the P type impurity is injected from the upper side, allowing to inject the P type impurity on the insulation layer 9 not covered with the resist 10 and the Si layer 4 around it. |
