| 摘要 |
PURPOSE:To increase the life and the efficiency, by using the insulation material including nitrogen formed under inactive atomosphere not including oxygen, as the surface protective film of compound semiconductor light emitting element. CONSTITUTION:On the InP compound semiconductor substrate having a given conduction type, a plurality of compound layers consisting of GaxIn1-xAsyP1-y of a given conduction type are grown, and after coating conductive layer on the both sides, they are split along the cleavage extending to the lamination in air. Further, the respective element of the double hetero junction type laser diode thus obtained is located under one atom nitrogen gas atomosphere, and the cleavage surface of the elements is exposed to nitrogen for about 10 minutes. After that, they are moved to the high frequency sputtering unit under nitrogen gas atomosphere without contacting to air, to produce the Si3N4 protective film having about 1000 Angstrom in thickness on the cleavage surface. Thus, the life is about doubled and the efficiency is about 1.5 times. |
