| 摘要 |
PURPOSE:To enable the line sequential scanning, intermediate tone write-in and erasion, by applying the voltage a half each voltage to the non-selection electrodes to halve the dielectric strength of the selector switch and by eliminating the effect of detouring capacitance, in applying the write-in, erasion and readout voltage to the selection electrode. CONSTITUTION:In the circuit of thin EL element showing the hysteresis phenomenon to the applied voltage and the luminance performance through the insertion of thin EL layer between the matrix electrodes orthogonal to each other, the circuit consisting of the transistors 21,22 fed by the keep voltage Vss to the thin EL element between electrodes, capacitor 24 superimposing the voltage of the write-in voltage source 63 to the thin film EL element on the keep voltage Vss, diodes 23,24 and D/A converter 91 outputting the current corresponding to the binary data, and constant current Tr 92, are provided. Further, Tr 103 and 104 conveting the voltage value of the write-in voltage corresponding to the output signal of the convertor 91 and applying the voltage about a half the keep voltage to the non-selection electrodes, capacitor 110, and diodes 101 and 111 are provided. |
