GRUPPO TRASDUTTORE DI PRESSIONE A SEMI-CONDUTTORI.

摘要

In a pressure transducer comprising a silicon substrate 10 having a thin diaphragm portion 10a the upper face of which contains piezoresistive elements 20 and being covered with a passivating layer 40 (eg of silicon dioxide), the lower surface of the diaphragm is provided with a balancing layer 70 (eg also of silicon dioxide) to eliminate thermally induced stresses in the diaphragm which would otherwise be caused by the difference in thermal expansion coefficients of silicon and the material of the passivating layer.