| 摘要 |
PURPOSE:To ensure the simultaneous and high-density formation of N- and P-type ch JFET's by providing the opposite conduction-type layer to the epitaxial layer to the epitaxial layer on the substrate. CONSTITUTION:The selective diffusion is given to P-type channel layer 13 of N- epitaxial layer 12's element Q2 on P-type substrate 11, and then the channel region of element Q1 is isolated via P<+>-layer 14. Then N<+>-layer 17 and 18 plus P+-layer 19 and 20 are formed to be used as the source and drain layers after the selective formation of P<+> gate 15 and N<+>-gate 16. After this, the electrode is formed as prescribed. In this way, the bipolar JFET's can be formed simultaneously in an easy way on the same substrate and with a high density. |
