Storage FET modified to reduce waste - incorporates auxiliary zone, with additional channel and selection gate

摘要

The storage FET has the known structure modified to reduce waste. There is an auxiliary zone (HS) which is of the same doping as the source and drain. It is introduced between the source (S) and the drain (D) in series with the channel (K). Behind this auxiliary zone is a further channel (Ka) with an isolated selection gate (Ga2). The further channel is very much wider than the normal channel (K). A third gate is used as a control gate (G2). The presence of this gate is optional and if present it acts capacitively on the storage gate (G1).