| 发明名称 |
MANUFACTURE OF GALLIUM PHOSPHIDE LUMINOUS ELEMENT |
| 摘要 |
PURPOSE:To increase the luminous efficiency by regulating the growth starting temperature to 1080-1150 deg.C for the growth of N-type layer in case a liquid-phase epitaxial growth is secured on N-type GaP substrate by laminating both N-and P-type GaP layers. |
| 申请公布号 |
JPS53146580(A) |
申请公布日期 |
1978.12.20 |
| 申请号 |
JP19770060957 |
申请日期 |
1977.05.27 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
KAWACHI MASARU;HACHIMAN AKIHIRO;NAITOU MAKOTO;MORISHITA MASAYUKI;UNNO KAZUMI |
| 分类号 |
H01L21/208;H01L33/30;H01L33/62 |
主分类号 |
H01L21/208 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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