| 发明名称 |
MANUFACTURE FOR COMPOUND SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To increase the activation rate of impurity injected and to increase the crystallization, by providing holes in which injected ions can be entered on the surface of a compound semiconductor in advance. |
| 申请公布号 |
JPS53142877(A) |
申请公布日期 |
1978.12.12 |
| 申请号 |
JP19770058292 |
申请日期 |
1977.05.19 |
| 申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
SUGAWA TOSHIO;KONUMA TAKESHI |
| 分类号 |
H01L29/93;H01L21/265;H01L29/47;H01L29/872;H01L29/92 |
主分类号 |
H01L29/93 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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