Process for preparing insulated gate semiconductor

摘要

An insulated gate semiconductor is prepared by forming auxiliary regions for source-drain regions having a shallow junction by a self-aligning process using a gate electrode as a mask; covering it with a thick insulating membrane for surface protection; forming a contact hole for bonding an electrode in the thick insulating membrane; and forming source-drain regions having deep junction through the contact hole and bonding an electrode metal to it in the contact hole.