| 发明名称 |
SILICON PLANAR TYPE SEMICONDUCTOR ELEMENT |
| 摘要 |
PURPOSE:To obtain a Si planar type element of a high dielectric strength by using an n type Si substrate of a specific resistance value larger than 30 to 40OMEGAcm being hitherto considered threshold values. |
| 申请公布号 |
JPS5383470(A) |
申请公布日期 |
1978.07.22 |
| 申请号 |
JP19760159458 |
申请日期 |
1976.12.28 |
| 申请人 |
FUJI ELECTRIC CO LTD |
发明人 |
KAMIJIYOU HIROSHI |
| 分类号 |
H01L29/73;H01L21/331;H01L29/06;H01L29/861 |
主分类号 |
H01L29/73 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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