| 摘要 |
<p>An insulated gate field effect transistor is formed of a drain region of a first conductivity type which faces both of the major surfaces of a semiconductor substrate, a frame region of a second conductivity type which faces the one major surface of the semiconductor substrate, a base region of the second conductivity type which faces the one major surface and is connected to the frame region, a PN junction being formed between the base region and the drain region, and a source region of the first conductivity type which faces the one major surface and is formed in the base region as if being surrounded thereby.</p> |
