PROCEDE DE FABRICATION D'UN DISPOSITIF SEMI-CONDUCTEUR,申请号BE19770178599-传众专利搜索

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发明名称	PROCEDE DE FABRICATION D'UN DISPOSITIF SEMI-CONDUCTEUR
摘要
申请公布号	BE855889(A1)	申请公布日期	1977.10.17
申请号	BE19770178599	申请日期	1977.06.20
申请人	RCA CORP.	发明人
分类号	H01L21/22;H01L29/74;(IPC1-7):H01L/	主分类号	H01L21/22
代理机构		代理人
主权项
地址

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