| 摘要 |
Gang bonding bumps, for making electrical connection to a metallic intraconnect pattern of metallization on an integrated circuit semiconductive device, are adhered to the interconnect pattern via the intermediary of a series of transition layers. These transition layers include a first layer of chromium, vacuum evaporated over the metallic interconnect pattern for providing a tightly adherent connection thereto. A layer of aluminum and chromium is vacuum evaporated over the chromium layer. A second layer of chromium is vacuum evaporated over the aluminum and chromium layer and a gold layer is deposited overlaying the chromium layer. The gold layer interfaces with the electroplated layers of the bump, which in a preferred embodiment consists of a lower layer of nickel covered by a layer of copper.
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