| 摘要 |
An avalanche transistor (three terminal avalanche device) is provided with a p<+> electrode, for example, added to an n<+> - n - n<+> structure. A reverse bias junction is provided by a first voltage source connected between the p<+> electrode and one of the n<+> electrodes. The magnitude of the reverse bias is such as to cause impact ionization. Forward bias voltage is provided by a second source connected between the other n<+> electrode and the p<+> electrode. Input or control signals are applied in series with the second source to add or subtract from the voltage level of the second source, controlling the number of minority carriers injected into the n<+> - n - n<+> structure to cause a change in breakdown voltage and operating point of the device.
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