| 摘要 |
1,246,026. Etching. MATSUSHITA ELECTRONICS CORP. 2 Oct., 1969 [4 Oct., 1968], No. 48442/69. Heading B6J. [Also in 'Division H1] A recess is etched, in the surface of a semiconductor body of silicon through a triangular or hexagonal window in an insulating masking film covering the body, the window having one side parallel to the <110> or <110> axis so that even sideways etching takes place under the window periphery. The etching solution used is a mixture of 8 ml. of water, 17 ml. of ethylendiamine and 3 g. of pyrocatechol. |
