发明名称 |
COMPOSITION AND METHOD |
摘要 |
This invention relates to a process for preparing a vitreous semiconductor comprising bismuth and selenium. The semiconductor has at least 0.5 atomic percent bismuth and a greater than a stoichiometric percentage of selenium. The invention also relates to a method for producing such a semiconductor by co-evaporating the bismuth and selenium and simultaneously quenching the metal and non-metal vapors onto a substrate held at a temperature below the condensation point of either component.
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申请公布号 |
US3627573(A) |
申请公布日期 |
1971.12.14 |
申请号 |
USD3627573 |
申请日期 |
1967.10.10 |
申请人 |
JOHN C. SCHOTTMILLER;FRANCIS W. RYAN;CHARLES WOOD |
发明人 |
JOHN C. SCHOTTMILLER;FRANCIS W. RYAN;CHARLES WOOD |
分类号 |
B22F9/00;C03C3/12;C22C28/00;C22C32/00;C23C14/06;C23C14/54;G03G5/082;H01J9/20;H01L21/00;(IPC1-7):H01L7/36 |
主分类号 |
B22F9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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