Process for defining polycrystalline silicon patterns

摘要

A process and method for accurately defining polycrystalline silicon patterns from a masking member. The critical dimensions of the silicon patterns are controlled by a diffusion step. Self-limiting etching is achieved through use of an etchant which discriminates between doped and undoped polycrystalline silicon. The process which provides significant advantages in production processing, permits fabrication of narrower gates and smoother edges on elongated silicon strips.