| 发明名称 |
SEMIICONDUCTOR UNIT |
| 摘要 |
PURPOSE:Improvement of the current amplification rate of the power and load transistors to reduce the power consumption, and of the bi-directional transistor current amplification rate of the inverter element to prevent the current hogging for the realization of high speed high frequency elements. |
| 申请公布号 |
JPS5220777(A) |
申请公布日期 |
1977.02.16 |
| 申请号 |
JP19750096784 |
申请日期 |
1975.08.09 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
TOKUMARU SEIYA;NAKAI MASANORI |
| 分类号 |
H01L27/082;H01L21/331;H01L21/8226;H01L27/02;H01L29/73;H03K19/091 |
主分类号 |
H01L27/082 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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