| 摘要 |
PURPOSE: A structure of a semiconductor memory device and its driving method are provided to simplify a production structure by integrating various volatile memories and to improve productivity, and to reduce power consumption and a driving voltage. CONSTITUTION: A memory device is based on a selection transistor for switch constituted on a semiconductor substrate and a ferroelectric capacitor. A structure of a memory unit cell and its driving method are based on the selection transistor for switch and the ferroelectric capacitor. And in a memory block, unit bundle of the unit cell or memory are arranged longitudinally and laterally. Data is recorded in the memory device based on the ferroelectric capacitor, and the stored data is recovered. Signals of several bit line pairs outputting data signals in several cells at the same time in one unit cell or one block are sensed and then one of the signals is selected.
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