| 发明名称 |
MANUFACTURE FOR DOUBLE GATE CONSITUTION SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To manufacture the evice of double gate constitution having high performance, by forming the SiO2 thin film of high dielectric strength through the addition of impurity to the floating gate in advance. |
| 申请公布号 |
JPS53122374(A) |
申请公布日期 |
1978.10.25 |
| 申请号 |
JP19770037303 |
申请日期 |
1977.03.31 |
| 申请人 |
FUJITSU LTD |
发明人 |
TANAKA IZUMI;SHIRAI KAZUNARI |
| 分类号 |
H01L21/306;H01L21/8247;H01L29/788;H01L29/792 |
主分类号 |
H01L21/306 |
| 代理机构 |
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代理人 |
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| 地址 |
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