| 摘要 |
1,238,679. Masking semi-conductors. ARBEITSSTELLE FUR MOLEKULARELEKTRONIK. 10 Dec., 1968, No. 58684/68. Heading H1K. An insulating masking layer is formed on a semi-conductor body by first forming a photoresist pattern constituting a negative of the desired mask on the surface of the body or on a layer thereon, by then depositing insulating material on the pattern and surface, and by then treating the photoresist material to remove it and that part of the insulating material overlying it. In an example a quartz plate is used as a silica course in a cathodic sputtering carried out in Ar, N 2 or O 2 in the presence of a magnetic field, the silica being deposited on to a photoresist covered silicon body. When enough silica has been deposited the discharge voltage is momentarily increased so that the photoresist material begins to decompose with the evolution of gas and breaks that part of the silica coating which overlies it. The coated silicon body is then placed in a solvent for the photoresist, given a short ultrasonic treatment, left for the photoresist to swell, and then further ultrasonic treatment is given to loosen the material such that the photoresist and overlying silica may be wiped off to leave the desired silica mask. Germanium and A<SP>III</SP>-B<SP>V</SP> bodies may be similarly masked. Masks may also be made of SiO x , 1<x<2; and of Si 3 N 4 . |
