| 摘要 |
PURPOSE:To apply PbO group glass having large chemical resistance and crack resistance, and to reduce defective withstanding voltage and inferior external appearance by using a non-doped silicon oxide film as a protective film for an element surface. CONSTITUTION:A non-doped silicon oxide film 11 is applied laminated on an SiO2 film 2 on the upper surface of a glass passivation transistor substrate 1 to which each region of an emitter and a base is formed. A hole 12 is bored in order to shape a groove for glass-passivating a P-N junction between both regions, and the groove 13 is formed by an etching liquid. Glass powder 5 is migration-attached in the groove 13 and baked, a resist film 14 is formed, glass projections 5' are removed, an opening for an electrode and the electrode are shaped, and the resist film 14 is removed.
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